Dual trench AlGaN/GaN HEMT on SiC substrate: A novel device to improve the breakdown voltage and high power performance
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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1. Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study;Results in Physics;2024-09
2. Design of a lateral photoconductive semiconductor switch with a low resistivity region on semi-insulating GaN to enhance breakdown characteristics;Optics Communications;2024-03
3. Impact of Graded AlGaN Buffer Layer Thickness on the DC, RF, Linearity, Intermodulation and Off-State Breakdown Characteristics of AlGaN Channel HEMT;IETE Technical Review;2024-02-19
4. Investigation of high threshold voltage E-mode AlGaN/GaN MIS-HEMT with triple barrier layer;Results in Physics;2021-06
5. The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors;Physica E: Low-dimensional Systems and Nanostructures;2021-03
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