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Control of electric field in 4H-SiC UMOSFET: Physical investigation

  • Published:2016-09 Issue: Volume:83 Page:107-113
  • ISSN:1386-9477
  • Container-title:Physica E: Low-dimensional Systems and Nanostructures
  • language:en
  • Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Jozi Mohammad,Orouji Ali A.,Fathipour Morteza

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Fundamentals of Power Semiconductor Devices;Baliga,2008

2. Advanced Power MOSFET Concepts;Baliga,2010

3. 1.1kV 4H-SiC power UMOSFET's;Agarwal;IEEE Electron Device Lett.,1997

4. 75V Space-efficiency trench power MOSFET;Yu;Energy Procedia,2011

5. Self-aligned UMOSFET's with a specific on-resistance of 1mΩ-cm2;Chang;IEEE Trans. Electron Devices,1987

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-clamped P-shield 4H-SiC trench MOSFET for low turn-off loss and suppress switching oscillation;Microelectronics Journal;2024-09

2. 4H-SiC Trench-Gate MOSFET with a Step-Shaped Deep P+ Source Area and an Extra n-Type Shielding Area;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

3. 1.2 kV 4H–SiC Super Junction UMOSFET with a Low-K dielectric pillar;Micro and Nanostructures;2023-04

4. A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics;Journal of Semiconductors;2022-12-01

5. 4H-SiC UMOSFET With an Electric Field Modulation Region Below P-Body;IEEE Transactions on Electron Devices;2020-08
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