Self-aligned UMOSFET's with a specific on-resistance of 1 mΩ.cm2-Reference-Cited by-同舟云学术

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Self-aligned UMOSFET's with a specific on-resistance of 1 mΩ.cm2

Published:1987-11 Issue:11 Volume:34 Page:2329-2334
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chang H.-R.,Black R.D.,Temple V.A.K.,Tantraporn W.,Baliga B.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31983/01486951.pdf?arnumber=1486951

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Next step in power MOSFET evolution boosts application efficiency;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

2. The Trench Power MOSFET: Part I—History, Technology, and Prospects;IEEE Transactions on Electron Devices;2017-03

3. Control of electric field in 4H-SiC UMOSFET: Physical investigation;Physica E: Low-dimensional Systems and Nanostructures;2016-09

4. High-voltage and low specific on-resistance power UMOSFET using P and N type columns;Materials Science in Semiconductor Processing;2015-11

5. A Development Summarization of the Power Semiconductor Devices II;IETE Technical Review;2012

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