Self-clamped P-shield 4H-SiC trench MOSFET for low turn-off loss and suppress switching oscillation-Reference-Cited by-同舟云学术

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Self-clamped P-shield 4H-SiC trench MOSFET for low turn-off loss and suppress switching oscillation

Published:2024-09 Issue: Volume:151 Page:106307
ISSN:1879-2391
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Wu Lijuan^ORCID,Yang Guanglin,Yang Deqiang,Tu Zigui,Yuan Jie,Zhao Dongsheng,Liu Mengjiao,Liang Jiahui

Publisher

Elsevier BV

Reference24 articles.

1. Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures

2. IEEE Trans. Electron Devices. 64 674;Williams,2017

3. International Symposium on Power Semiconductor Devices and ICs;Spaziani,2018

4. Control of electric field in 4H-SiC UMOSFET: Physical investigation

5. 2005 International Symposium on Power Semiconductor Devices and ICs;Zhang,2005

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