A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Design and simulation of a nanoelectronic DG MOSFET current source using artificial neural networks
2. An approach based on neural computation to simulate the nanoscale CMOS circuits: Application to the simulation of CMOS inverter
3. A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs
4. Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges
5. Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs
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