Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy-Reference-Cited by-同舟云学术

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Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy

Published:2010-03 Issue:5 Volume:42 Page:1536-1539
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Ryu S.P.,Cho N.K.,Lim J.Y.,Choi W.J.,Song J.D.,Lee J.I.,Lee Y.T.,Park C.G.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Energy states in InAs–GaAs quantum dots-in-asymmetric-well infrared photodetector structure

2. Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer

3. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

4. Structural and optical properties of shape-engineered InAs quantum dots

5. Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 μm laser diode

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of strain reduced In0.54Al0.34Ga0.12As layer of vertically coupled QDs arrays for O-band telecom single photon sources;Journal of Alloys and Compounds;2023-10

2. Comparative Study of Strain-Engineered InAs Quantum Dots via an In0.23Ga0.77As Matrix with Various Sequences and Thicknesses;CHINESE J PHYS;2013

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