Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1517710
Reference14 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
3. Strain engineering of self-organized InAs quantum dots
4. Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1−xAs strain-relieving quantum wells
5. Tuning self-assembled InAs quantum dots by rapid thermal annealing
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1. Effect of size and composition fluctuations on the luminescent properties of ensemble of InGaAs nano-objects;SPIE Proceedings;2015-09-04
2. Colloidal and Epitaxial Quantum Dot Infrared Photodetectors: Growth, Performance, and Comparison;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-09-15
3. Strained Quantum Rings;Physics of Quantum Rings;2013-08-29
4. Photoluminescence spectroscopy study of excited states in InxGa1−xAs-capped InAs quantum dots;International Journal of Nanotechnology;2013
5. Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices;Journal of Applied Physics;2010-04
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