Lasing and spontaneous emission characteristics of 1.3μm In(Ga)As quantum-dot lasers-Reference-Cited by-同舟云学术

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Lasing and spontaneous emission characteristics of 1.3μm In(Ga)As quantum-dot lasers

Published:2005-02 Issue:1-4 Volume:26 Page:382-385
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Sellers I.R.,Liu H.Y.,Badcock T.J.,Groom K.M.,Mowbray D.J.,Gutiérrez M.,Hopkinson M.,Skolnick M.S.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. 3.5 W CW operation of quantum dot laser

2. Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

3. Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)

4. Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth

5. High temperature performance of self-organised quantum dot laser with stacked p-doped active region

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1. Optical Aharonov-Bohm Effect in Type-II Quantum Dots;Physics of Quantum Rings;2013-08-29

2. Defect mediated extraction in InAs/GaAs quantum dot solar cells;Solar Energy Materials and Solar Cells;2012-07

3. Optical Aharonov-Bohm Effect in Type-II (ZnMn)Te/ZnSe Quantum Dots;Journal of Nanoelectronics and Optoelectronics;2011-03-01

4. Evidence of correlated electron hole pairs in dots in asymmetric quantum well structures;Journal of Physics: Conference Series;2010-09-01

5. Optical determination of the effective wetting layer thickness and composition inInAs∕Ga(In)Asquantum dots;Physical Review B;2007-08-21

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