Epitaxial erbium silicide on Ge+ implanted silicon-Reference-Cited by-同舟云学术

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Epitaxial erbium silicide on Ge+ implanted silicon

Published:2002-11 Issue:1-2 Volume:196 Page:174-179
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Travlos A,Boukos N,Apostolopoulos G,Aidinis C.J,Bischoff L

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Growth, characterization and electrical properties of epitaxial erbium silicide

2. Magnetic and magnetotransport properties of erbium silicide epitaxial films

3. Growth of epitaxial CoSi2 films on strained heterostructures

4. Growth of epitaxial CoSi2 on SiGe(001)

5. An improved silicon p-channel MESFET with a BF2 implanted thin channel and ErSi2 gate

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of Er-germanosilicide films on strained Si1−xGexwith different Ge contents;physica status solidi (a);2015-01-15

2. Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy;Applied Physics Letters;2011-06-20

3. Materials and Electrical Characterization of Er(Si[sub 1−x]Ge[sub x])[sub 2−y] Films Formed on Si[sub 1−x]Ge[sub x](001) (x=0–0.3) via Rapid Thermal Annealing;Journal of The Electrochemical Society;2008

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