Growth of epitaxial CoSi2 films on strained heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Study of ballistic transport in Si‐CoSi2‐Si metal base transistors
2. Application of MBE-grown epitaxial Si/CoSi/sub 2//Si heterostructures for overgrown silicon permeable-base transistors
3. Transistor action of metal (CoSi2)/insulator (CaF2) hot electron transistor structure
4. Application of epitaxial CoSi2⧸Si⧸CoSi2 heterostructures to tunable Schottky-barrier detectors
5. Growth and characterization of epitaxial Ni and Co silicides
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1. Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(0 0 1) and epi-CoSi2/Si0.83Ge0.17/Si(0 0 1) structures;Applied Surface Science;2004-10
2. Structural and electrical characteristics of epitaxial CoSi2 grown on n-Si0.83Ge0.17/n-Si(001) by reactive chemical vapor deposition using a Si capping layer;Thin Solid Films;2004-06
3. Formation and Properties of Epitaxial CoSi2Layers on p-Si0.83Ge0.17/p-Si(001) using a Si Capping Layer by Metal-Organic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2003-06-15
4. Epitaxial erbium silicide on Ge+ implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-11
5. Epitaxial ErSi2−x on strained and relaxed Si1−xGex;Materials Science and Engineering: B;2002-02
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