Epitaxial ErSi2−x on strained and relaxed Si1−xGex

Author:

Travlos A,Apostolopoulos G,Boukos N,Katiniotis Ch,Tsamakis D

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Formation of Er-germanosilicide films on strained Si1−xGexwith different Ge contents;physica status solidi (a);2015-01-15

2. Erbium germanosilicide Ohmic contacts on Si1−x Ge x (x=0–0.3) substrates;Science China Physics, Mechanics and Astronomy;2011-05-07

3. Materials and Electrical Characterization of Er(Si[sub 1−x]Ge[sub x])[sub 2−y] Films Formed on Si[sub 1−x]Ge[sub x](001) (x=0–0.3) via Rapid Thermal Annealing;Journal of The Electrochemical Society;2008

4. Epitaxial erbium silicide on Ge+ implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-11

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