Epitaxial ErSi2−x on strained and relaxed Si1−xGex
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference4 articles.
1. Growth of epitaxial CoSi2 films on strained heterostructures
2. Growth of epitaxial CoSi2 on SiGe(001)
3. Epitaxial erbium silicide films on(100) silicon: growth, structure and electrical properties
4. High crystalline quality erbium silicide films on (100) silicon, grown in high vacuum
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Formation of Er-germanosilicide films on strained Si1−xGexwith different Ge contents;physica status solidi (a);2015-01-15
2. Erbium germanosilicide Ohmic contacts on Si1−x Ge x (x=0–0.3) substrates;Science China Physics, Mechanics and Astronomy;2011-05-07
3. Materials and Electrical Characterization of Er(Si[sub 1−x]Ge[sub x])[sub 2−y] Films Formed on Si[sub 1−x]Ge[sub x](001) (x=0–0.3) via Rapid Thermal Annealing;Journal of The Electrochemical Society;2008
4. Epitaxial erbium silicide on Ge+ implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-11
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