An improved silicon p-channel MESFET with a BF2 implanted thin channel and ErSi2 gate-Reference-Cited by-同舟云学术

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An improved silicon p-channel MESFET with a BF2 implanted thin channel and ErSi2 gate

Published:1989-11 Issue:11 Volume:32 Page:993-996
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Tirén J.,Magnusson U.,Rosling M.,Bleichner H.,Berg S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Complementary silicon MESFET technology

2. Influence of silicon-sapphire interface defects on SOS MESFET behavior

3. Physics of Semiconductor Devices;Sze,1981

4. Metal Semiconductor Contacts;Rhoderic,1978

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial erbium silicide on Ge+ implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-11

2. Electrical properties of crystalline Er and Dy silicide layers;Thin Solid Films;2002-10

3. Epitaxial dysprosium silicide films on silicon: growth, structure and electrical properties;Thin Solid Films;2001-10

4. Interfacial reactions of Gd thin films on (111) and (001)Si;Applied Surface Science;1999-04

5. Pairing mechanism in interaction of atomic hydrogen with epitaxial erbium silicide;Surface Science;1999-02

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