Controlling the density distribution of SiC nanocrystals for the ion beam synthesis of buried SiC layers in silicon-Reference-Cited by-同舟云学术

Controlling the density distribution of SiC nanocrystals for the ion beam synthesis of buried SiC layers in silicon

Published:1999-01 Issue:1-4 Volume:147 Page:249-255
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Lindner J.K.N,Stritzker B

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Ion beam synthesis of cobalt silicide: effect of implantation temperature

2. Ion beam synthesis of deep buried NiSi2 layers in silicon by 6 MeV Ni implantation

3. Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesis

4. keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

5. J.K.N. Lindner, K. Volz, B. Stritzker, in: S. Nakashima, et al. (Eds.), Silicon Carbide and Related Materials 1995, IOP Conf. Ser. Vol. 142, 145, Institute of Physics Publishing, Bristol, 1996

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