Electrically active defects in BF2+ implanted and germanium preamorphized silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. SOLID-II: High-voltage high-gain kilo-Ångstrom-channel-length CMOSFET's using Silicide with self-aligned ultrashallow (3S) junction
2. Very-shallow low-resistivity p+-n junctions for CMOS technology
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5. Optimization of the germanium preamorphization conditions for shallow-junction formation
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1. Comparative study on EOR and deep level defects in preamorphised Si implanted with B+, and F+–B+;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-08
2. Shallow BF2 implants in Xe-bombardment-preamorphized Si: The interaction between Xe and F;Applied Physics Letters;2005-04-11
3. The interaction between Xe and F in Si (100) pre-amorphised with 20keV Xe and implanted with low energy BF2;Materials Science and Engineering: B;2004-12
4. Simplex Algorithm for Deep-Level Transient Spectroscopy: Simplex-DLTS;Japanese Journal of Applied Physics;2004-11-10
5. New approach to remove crystal originated pits in Czochralski-grown silicon: combination of germanium ion implantation with solid-phase epitaxy;Journal of Crystal Growth;2004-11
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