New approach to remove crystal originated pits in Czochralski-grown silicon: combination of germanium ion implantation with solid-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits
2. H. Shimizu, T. Satoh, M. Muranaka, K. Makabe, M. Miura, Third International Symposium on Defects in Silicon of the Electrochemical Society, Seattle, Washington, 1999, pp. 315.
3. Silicon crystals for future requirements of 300mm wafers
4. Recognition of D defects in silicon single crystals by preferential etching and effect on gate oxide integrity
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1. Strain-stabilized solid phase epitaxy of Si–Ge on Si;Journal of Applied Physics;2006-06
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