Electrical behaviour of high energy 120Sn implantation in n- and p-type GaAs-Reference-Cited by-同舟云学术

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Electrical behaviour of high energy 120Sn implantation in n- and p-type GaAs

Published:1999-01 Issue:1-4 Volume:148 Page:421-425
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Narsale A.M,Pyar Ali Yousuf,Arora B.M

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. D.V. Morgan, F.H. Eisen, in: M.J. Howes, D.V. Morgan (Eds.), Gallium Arsenide, Wiley, New York, 1985, p. 161

2. MeV Implantation In The III-V's

3. MeV Si implantation in GaAs

4. Ion implantation for isolation of III-V semiconductors

5. Electrical properties of high energy 120Sn implantation in GaAs

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Probing charge carrier compensation in high energy ion irradiated III-V semiconductor by Raman spectroscopy and Hall measurements;Journal of Raman Spectroscopy;2016-04-14

2. SIMS Study of 30keV H⁺ Ion-Implanted n-GaAs;Defect and Diffusion Forum;2011-10

3. Photoacoustic and photoluminescence studies of H+ion-implanted n-GaAs;physica status solidi (a);2005-02

4. Raman study on H+-implantation effects in highly doped n-GaAs;Physica B: Condensed Matter;2002-04

5. Annealing effects on electrical characteristics of 100 MeV Si-28 implantation in GaAs;Journal of Materials Science: Materials in Electronics;2000

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