Affiliation:
1. Sethu Institute of Technology
2. Madurai Kamaraj University
3. Universitetet of Oslo
4. University of Oslo
Abstract
A detailed analysis on the depth profiles of 30 keV H+ ion implanted n-GaAs for various doses from 1014 to 1017 cm-2 was carried by using Secondary ion mass spectrometry (SIMS), to identify the buried amorphous layer. The results are correlated with Raman and XRD strain parameter studies. Various thermal parameters are computed for the 30 keV H+ ion implanted n-GaAs and SIMS study reported for the first time.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Radiation
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