Distribution of gettering centres at a buried amorphous layer in silicon-Reference-Cited by-同舟云学术

Distribution of gettering centres at a buried amorphous layer in silicon

Published:1999-01 Issue:1-4 Volume:148 Page:334-339
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kögler R.,Eichhorn F.,Mücklich A.,Danilin A.B.,Skorupa W.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Detection of Metastabile Defective Regions in Ion-Implanted Silicon by Means of Metal Gettering

2. R. Kögler, D. Panknin, W. Skorupa, P. Werner, A. Danilin, Proceedings of XI Int. Conf. on Ion Implantation and Technology, IIT96, p. 679, IEEE Publ. 96TH8182, Piscataway, NJ

3. MeV-ion-induced damage in Si and its annealing

4. Oxygen gettering and precipitation at MeV Si+ ion implantation induced damage in silicon

5. O. Kononchuk, R.A. Brown, S. Koveshnikov, K. Beamen,.F. Gonzalez, G.A. Rozgonyi, VII. Int. Conf. GADEST’97, Solid State Phenomena vol. 57/58, 1997, p. 69

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3. Gettering centres in high-energy ion-implanted silicon investigated by point defect recombination;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04

4. Metallic impurity gettering to defects remaining in the RP/2 region of MeV-ion implanted and annealed silicon;Materials Science in Semiconductor Processing;2000-08

5. Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon;Applied Physics Letters;1999-08-30