Metallic impurity gettering to defects remaining in the RP/2 region of MeV-ion implanted and annealed silicon

Author:

Peeva A,Koegler R,Brauer G,Werner P,Skorupa W

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Proximity gettering with mega-electron-volt carbon and oxygen implantations;Wong;Appl Phys Lett,1988

2. Koegler R, Panknin D, Skorupa W, Werner P, Danilin A. Impurity gettering in damaged regions of Si produced by high energy ion implantation. Proceedings of the 11th International Conference on Ion Implantation and Technology, 1996. p. 679–81.

3. Koegler R, Posselt M, Yankov RA, Kaschny JR, Skorupa W, Danilin AB. Detection of metastable defective regions in ion-implanted silicon by means of metal gettering. Material Research Society Symposium Proceedings, 1997, vol. 469, p. 463–8.

4. MeV-ion-indused damage in Si and its annealing;Tamura;Nucl Instr Meth B,1991

5. Metallic impurity gettering in MeV implanted Si;Kononchuk;Solid State Phenomena,1997

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1. Plasma immersion ion implantation: A viable candidate for low cost purification of mc-Si by nanocavities?;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-01

2. Investigation of gettering effects in CZ-type silicon with SIMS;Analytical and Bioanalytical Chemistry;2005-04

3. Visualization of vacancy type defects in the RP/2 region of ion implanted and annealed silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05

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