Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124667
Reference25 articles.
1. Transient Phosphorus Diffusion Below the Amorphization Threshold
2. Extended defect formation and the flux of interstitials in Si-ion implanted silicon
3. Detection of Metastabile Defective Regions in Ion-Implanted Silicon by Means of Metal Gettering
4. Metallic Impurity Gettering in MeV Implanted Si
5. Impurity gettering to secondary defects created by MeV ion implantation in silicon
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