Spatial distribution of defects in ion-implanted and annealed Si: The RP/2 effect
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference30 articles.
1. Gettering by ion implantation
2. Proximity gettering with mega‐electron‐volt carbon and oxygen implantations
3. Proximity gettering of transition metals in silicon by ion implantation
4. Proximity Gettering of Heavy Metals by High-Energy Ion Implantation
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1. THE EFFECT OF DOPANT DOSE LOSS DURING ANNEALING ON HEAVILY DOPED SURFACE LAYERS OBTAINED BY RECOIL IMPLANTATION OF ANTIMONY IN SILICON;Surface Review and Letters;2013-08
2. Fe and Cu in Si: Lattice sites and trapping at implantation-related defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12
3. Annealing Effect on Structural Defects in Low-Dose Separation-by-Implanted-Oxygen Wafers;Japanese Journal of Applied Physics;2006-10-06
4. Consecutive stages of redistribution of oxygen implanted in silicon heavily doped with boron;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-10
5. Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions;Semiconductors;2006-05
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