High energy implantation and annealing of phosphorus in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. High energy ion implantation
2. The implanted profiles of boron, phosphorus and arsenic in silicon from junction depth measurements
3. Experimental Evaluation of High Energy Ion Implantation Gradients for Possible Fabrication of a Transistor Pedestal Collector
4. Range distributions of MeV implants in silicon
5. High Sensitivity Non-Destructive Profiling of Radiation Induced Damage in MOS Structures
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