Effect of annealing time and temperature on the formation of threading and projected range dislocations in 1 MeV boron implanted Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1355006
Reference19 articles.
1. Proximity gettering with mega‐electron‐volt carbon and oxygen implantations
2. High energy ion implantation for profiled tub formation and impurity gettering in deep submicron CMOS technology
3. Impurity gettering to secondary defects created by MeV ion implantation in silicon
4. Depth distribution of secondary defects in 2‐MeV boron‐implanted silicon
5. MeV-energy B+, P+ and As+ ion implantation into Si
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1. Influence of Operating Conditions on Quantum Cascade Laser Temperature;Journal of Electronic Materials;2010-04-14
2. Effects of defect, carrier concentration and annealing process on the photoluminescence of silicon pn diodes;Materials Science in Semiconductor Processing;2007-08
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4. Implantation Induced Defects in the Retrograde Well with a Buried Layer;Journal of The Electrochemical Society;2002
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