Rapid thermal anneal in InP, GaAs and GaAs/GaAlAs
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. n+ self-aligned-gate AlGaAs/GaAs heterostructure FET
2. GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers
3. Rapid thermal annealing of Si implanted GaAs for power field‐effect transistors
4. Self-aligned InP p-n junction diodes fabricated with ³He+bombardment
5. Improvement of InP MISFET characteristics using infra-red lamp annealing
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors;Rapid Thermal Processing of Semiconductors;1997
2. Component autodiffusion into protective coatings in ion-implanted InP;Physica Status Solidi (a);1989-12-16
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