Dopant behaviour and damage annealing in silicon implanted with 1 keV arsenic
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
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1. Formation, nature, and stability of the arsenic-silicon-oxygen alloy for plasma doping of non-planar silicon structures;Applied Physics Letters;2014-12-29
2. Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy;Applied Physics Letters;2013-01-07
3. Depth resolved study of impurity sites in low energy ion implanted As in Si;Journal of Applied Physics;2007-08-15
4. Studies of ultra shallow n+–p junctions formed by low-energy As-implantation;Materials Science and Engineering: B;2004-12
5. Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
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