Effect of rapid thermal annealing on oxide precipitation behavior in silicon crystal
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference7 articles.
1. Vacancy-Assisted Oxygen Precipitation Phenomena in Si
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4. J.G. Wilkes, in: Properties of Silicon, EMIS Data Reviews Series, Vol. 4, INSPEC, London and New York, 1988, Chapter 12, p. 281
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