Divacancy profiles in MeV helium irradiated silicon from reverse I–V measurement
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference24 articles.
1. Production of Fast Switching Power Thyristors by Proton Irradiation
2. Optimization of power diode characteristics by means of ion irradiation
3. Deep level transient spectroscopy analysis of fast ion tracks in silicon
4. Hydrogen-related deep levels in proton-bombarded silicon
5. Application of High Energy Ion Beams for Local Lifetime Control in Silicon
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