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High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si

  • Published:1999-11 Issue:3 Volume:159 Page:133-141
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Zhang Yanwen,Winzell Thomas,Zhang Tonghe,Maximov Ivan A,Sarwe Eva-Lena,Graczyk Mariusz,Montelius Lars,Whitlow Harry J

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced tunability of the composition in silicon oxynitride thin films by the reactive gas pulsing process;Applied Surface Science;2014-01

2. Formation of cobalt silicide from filter metal vacuum arc deposited films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-06

3. Ion-induced photon spectroscopy of insulators and application to in-situ diagnostics of nanoparticle formation processes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05

4. Annealing behaviour of foreign atom incorporated Co-silicides formed by MEVVA implantation into SiO2/Si and Si3N4/Si structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04

5. Ion-induced photon emission of magnesium aluminate spinel during 60 keV Cu− implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
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