Annealing behaviour of foreign atom incorporated Co-silicides formed by MEVVA implantation into SiO2/Si and Si3N4/Si structures-Reference-Cited by-同舟云学术

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Annealing behaviour of foreign atom incorporated Co-silicides formed by MEVVA implantation into SiO2/Si and Si3N4/Si structures

Published:2001-04 Issue: Volume:175-177 Page:737-743
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Zhang Yanwen,Zhang Tonghe,Lu Dian-Tong,Maximov Ivan A.,Sarwe Eva-Lena,Graczyk Mariusz,Whitlow Harry J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. High current ion source

2. Broad beam high average current metal ion source

3. High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si

4. High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si

5. High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Corrosion resistance improvement of steel AISI 4140 by using a titanium/titanium nitride multilayer coating system;Revista Facultad de Ingeniería Universidad de Antioquia;2013-12-10

2. Optical properties of aluminum oxide after irradiation with cobalt ions;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2009-04

3. Formation of cobalt silicide films by ion beam deposition;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01

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