Author:
Liu Changlong,Hou Mingdong,Zhu Zhiyong,Wang Zhiguang,Cheng Song,Jin Yunfan,Sun Youmei,Li Changlin
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
6 articles.
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1. The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-07
2. Materials research with swift heavy ions at the IMP accelerators;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-04
3. Stable Fourfold Configurations for Small Vacancy Clusters in Silicon fromab initioCalculations;Physical Review Letters;2004-06-23
4. Silicon, paramagnetic centers: principal values of g-tensors of cubic centers;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements
5. Silicon, paramagnetic centers: principal values of g-tensors of trigonal centers;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements