Reliability of shallow n+-type layers formed in dual As and B implanted silicon by rapid thermal annealing-Reference-Cited by-同舟云学术

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Reliability of shallow n+-type layers formed in dual As and B implanted silicon by rapid thermal annealing

Published:1997-01 Issue:1-4 Volume:121 Page:295-298
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Yokota Katsuhiro,Hosokawa Kouichi,Oda Kouji,Miyashita Fumiyoshi,Hirai Kiyoto,Takano Hiromichi,Kumagai Masao,Ando Yasuo,Matsuda Kouji

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2or Si++B+

2. Si ultrashallowp+njunctions using low‐energy boron implantation

3. Formation of Shallow Boron‐Doped Layer for Channel Doping Using Preamorphization

4. Application of Rapid Isothermal Annealing to Shallow p‐n Junctions via BF 2 Implants

5. Interactions between arsenic and boron implanted in silicon during annealing

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Counterdoped very shallow p+/n junctions obtained by B and Sb implantation and codiffusion in Si;Journal of Applied Physics;1998-02

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