2 MeV Si ion implantation damage in relaxed Si1−xGex-Reference-Cited by-同舟云学术

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2 MeV Si ion implantation damage in relaxed Si1−xGex

Published:1996-12 Issue:1-4 Volume:120 Page:165-168
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

O'Raifeartaigh C.,Barklie R.C.,Nylandsted Larsen A.,Priolo F.,Franzó G.,Lulli G.,Bianconi M.,Lindner J.K.N.,Cristiano F.,Hemment P.L.F.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

1. Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices

2. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

3. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

4. Growth and characterization of compositionally graded, relaxed Si1-xGex

5. From Relaxed GeSi Buffers to Field Effect Transistors: Current Status and Future Prospects

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective amorphization of SiGe in Si/SiGe nanostructures via high energy Si+ implant;Journal of Applied Physics;2022-07-21

2. Simulation of Single Particle Displacement Damage in Si₁₋ₓGeₓ Alloys—Interaction of Primary Particles With the Material and Generation of the Damage Structure;IEEE Transactions on Nuclear Science;2020-07

3. Influence of the Germanium content on the amorphization of silicon–germanium alloys during ion implantation;Materials Science in Semiconductor Processing;2013-12

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