Proximity gettering of copper in separation-by-implanted-oxygen structures
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. Gettering of gold and copper with implanted carbon in silicon
2. Proximity getterihg by MeV-implantation of carbon: microstructure and carrier lifetime measurements
3. Gettering of metals by voids in silicon
4. Interaction of copper with cavities in silicon
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Gettering in silicon-on-insulator wafers: experimental studies and modelling;Semiconductor Science and Technology;2005-04-15
2. High efficiency gettering of Au in Si(111) by MeV C implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06
3. Nickel precipitation at nanocavities in separation by implantation of oxygen;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000
4. Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen;Journal of Applied Physics;1999-10-15
5. Calibrated Contamination Spiking Method for Silicon Wafers in the 1010 – 1012 Atom / cm2 Range;Journal of The Electrochemical Society;1999-06-01
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