Amorphous zone evolution in Si during elevated temperature ion bombardment-Reference-Cited by-同舟云学术

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Amorphous zone evolution in Si during elevated temperature ion bombardment

Published:2001-03 Issue:1-2 Volume:174 Page:130-136
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kucheyev S.O.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference29 articles.

1. Observation of ion bombardment damage in silicon

2. Ion Implantation in Semiconductors;Mayer,1970

3. Heavy ion damage in silicon and germanium

4. Features of collision cascades in silicon as determined by transmission electron microscopy

5. High resolution and in situ investigation of defects in Bi-irradiated Si

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation defect dynamics in Si at room temperature studied by pulsed ion beams;Journal of Applied Physics;2015-10-07

2. RBS and TEM studies of indium phosphide irradiated with 100 keV Au ions;Physics of Particles and Nuclei Letters;2009-11

3. Model for electrical isolation of GaN by light-ion bombardment;Journal of Applied Physics;2002-11-15

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