Heavy ion damage in silicon and germanium-Reference-Cited by-同舟云学术

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Heavy ion damage in silicon and germanium

Published:1987-01 Issue: Volume:19-20 Page:61-66
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Howe L.M.,Rainville M.H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference23 articles.

1. Conversion of crystalline germanium to amorphous germanium by ion bombardment

2. Radiation Effects in Semiconductors;Parsons,1968

3. Observation of Crystal Lattice Planes in Neutron and Ion Bombarded Ge Invited Paper

4. Ion Implantation in Semiconductors;Mitchell,1975

5. Polyatomic-Ion Implantation Damage in Silicon

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1. Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3;APL Materials;2023-06-01

2. Depth-dependent recovery of thermal conductivity after recrystallization of amorphous silicon;Journal of Applied Physics;2023-04-03

3. Rethinking radiation effects in materials science using the plasma-focused ion beam;Journal of Materials Science;2022-09

4. Confinement in MeV Au 2+ implanted Si: a Raman scattering study;Advances in Natural Sciences: Nanoscience and Nanotechnology;2013-12-05

5. RBS and TEM studies of indium phosphide irradiated with 100 keV Au ions;Physics of Particles and Nuclei Letters;2009-11

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