Electrical characterisation of epitaxially grown n-GaN bombarded with high- and low-energy protons
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
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1. Formation of Radiation Defects in Wide-Band Semiconductors Based on Gallium (Ga<sub>2</sub>O<sub>3</sub>, GaN) under Proton Irradiation;Поверхность. Рентгеновские, синхротронные и нейтронные исследования;2023-12-01
2. Effects of Proton Irradiation on the Magnetoelectric Properties of 2DEG AlGaN/GaN Micro-Hall Sensors;Journal of Physics: Conference Series;2012-03-05
3. 380keV proton irradiation effects on photoluminescence of Eu-doped GaN;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-03
4. Characterisation of defects in rare earth implanted GaN by deep level transient spectroscopy;Superlattices and Microstructures;2004-10
5. Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence;IEEE Transactions on Nuclear Science;2003-12
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