380keV proton irradiation effects on photoluminescence of Eu-doped GaN-Reference-Cited by-同舟云学术

380keV proton irradiation effects on photoluminescence of Eu-doped GaN

Published:2008-03 Issue:5 Volume:266 Page:853-856
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Okada Hiroshi,Nakanishi Yasuo,Wakahara Akihiro,Yoshida Akira,Ohshima Takeshi

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

2. Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN

3. Effects of implantation conditions on the luminescence properties of Eu-doped GaN

4. Y. Nakanishi, A. Wakahara, A. Yoshida, T. Ohshima, H. Itoh, S. Sakai, in: Proceedings of the International Workshop on Nitride Semiconductors, IPAP Conference Series 1, 2000, p. 486.

5. Photoluminescence of GaN: Effect of electron irradiation

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