Formation of Radiation Defects in Wide-Band Semiconductors Based on Gallium (Ga₂O₃, GaN) under Proton Irradiation

Abstract

Using mathematical modeling of the displacement cascade in two wide-gap semiconductors based on gallium, gallium oxide (Ga2O3) and gallium nitride (GaN), the features of the generation of Frenkel pairs during the scattering of protons with energies of 8 and 15 MeV are considered. The number of displacements created not only by primary knocked-on atoms, but also by recoil atoms generated in displacement cascades is calculated for the first time. Calculations have shown that under proton irradiation of Ga2O3, for example, the fraction of vacancies in the oxygen sublattice created directly by protons is only 12%. The remaining 88% are created by recoil atoms in cascade processes. For the gallium sublattice, these fractions are 25 and 75%, respectively. Therefore, the processes of compensating the conductivity of GaN and Ga2O3 observed under proton irradiation will be determined by deep centers created not by primary knocked-on atoms, but by recoil atoms formed in displacement cascades. A comparison with experimental data is made, and the fraction of Frenkel pairs dissociating during irradiation is estimated.