Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon-Reference-Cited by-同舟云学术

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Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon

Published:2001-04 Issue:3 Volume:174 Page:297-303
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Lévêque P.,Pellegrino P.,Hallén A.,Svensson B.G.,Privitera V.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference23 articles.

1. Localized lifetime control in insulated-gate transistors by proton implantation

2. Production of Fast Switching Power Thyristors by Proton Irradiation

3. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

4. An MeV-ion implanter for large area applications

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1. Combined techniques for recovery of radiation damaged detectors;Materials Science in Semiconductor Processing;2023-12

2. Interaction of low-energy muons with defect profiles in proton-irradiated Si and 4H -SiC;Physical Review B;2019-09-17

3. Interaction Between Hydrogen and Vacancy Defects in Crystalline Silicon;physica status solidi (a);2018-12-11

4. Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon;Solid State Phenomena;2015-10

5. Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices;Advances in Electrical Engineering;2014-11-03

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