Interaction Between Hydrogen and Vacancy Defects in Crystalline Silicon-Reference-Cited by-同舟云学术

Interaction Between Hydrogen and Vacancy Defects in Crystalline Silicon

Published:2018-12-11 Issue:10 Volume:216 Page:1800670
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kolevatov Ilia L.¹,Weiser Philip M.¹,Monakhov Eduard V.¹,Svensson Bengt G.¹

Affiliation:

1. Department of PhysicsUniversity of OsloCenter for Materials Science and NanotechnologyP.O.Box 1048 BlindernN‐0316OsloNorway

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201800670

Reference98 articles.

1. HYDROGEN IN SEMICONDUCTORS

2. Infrared spectroscopy of hydrogen on silicon surfaces

3. Hydrogen passivation of dislocations in silicon

4. Kinetics ofH2passivation ofPbcenters at the (111) Si-SiO2interface

5. Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties

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