Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1−x−yGexCy by vacuum annealing and pulsed KrF laser annealing
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference23 articles.
1. Heterojunction bipolar transistors using Si-Ge alloys
2. Structure, properties and applications of GexSi1-xstrained layers and superlattices
3. Interfacial Reaction Between Ni and MBE‐Grown SiGe Alloy
4. Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 films
5. Thermal reaction between Pt thin films and SixGe1−xalloys
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1. Pulsed Laser Annealing Technology for Nano-Scale Fabrication of Silicon-Based Devices in Semiconductors ☆;Advances in Laser Materials Processing;2018
2. Structural and Electrical Properties of Ni-Germanosilicides Formed Using Pulsed KrF Laser Annealing;Journal of Computational and Theoretical Nanoscience;2015-05-01
3. Pulsed laser annealing technology for nanoscale fabrication of silicon-based devices in semiconductors;Advances in Laser Materials Processing;2010
4. Laser-Induced Melt-Mediated Ni(Pt) Germanosilicide Formation on Condensed Si[sub 1−x]Ge[sub x]/Si Substrates;Electrochemical and Solid-State Letters;2008
5. Nickel silicide formation using multiple-pulsed laser annealing;Journal of Applied Physics;2007-02
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