Effects of growth direction on lasing performance in GaAsAlxGa1−xAs quantum wells
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. Molecular beam epitaxial growth of GaP on Si
2. Polar heterojunction interfaces
3. AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy
4. Interface morphology studies of (110) and (111) Ge‐GaAs grown by molecular beam epitaxy
5. Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam Epitaxy
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