Superposition of light-hole and heavy-hole bandgaps in strained quantum-well structures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. Growth and characterization of InxGa1−xAs/InyGa1−yAs strained‐layer superlattice on InP substrate
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Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electric-field-independent band gap superpositioning at 1.3 μm in an InGaAs–InAlAs strained-layer superlattice;Applied Physics Letters;1997-10-20
2. Broad-band light-emitting diode for 1.4-2.0 μm using variable-composition InGaAs quantum wells;IEEE Photonics Technology Letters;1995-11
3. Novel pseudoalloy approach to epitaxial growth of complex InGaAlAs multilayer structures;Applied Physics Letters;1995-05-22
4. Electric‐field‐dependent electroreflectance spectra of visible‐band‐gap (InAlGa)P quantum‐well structures;Applied Physics Letters;1994-04-04
5. Level anticrossing and related giant optical anisotropy caused by the Stark effect in a strained (110) quantum well;Physical Review B;1994-03-15
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