Electric‐field‐dependent electroreflectance spectra of visible‐band‐gap (InAlGa)P quantum‐well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111767
Reference15 articles.
1. OMVPE growth of AlGaInP/GaxIn1−xP strained quantum well structures and their applications to visible laser diodes
2. OMVPE growth of AlGaInP/GaxIn1−xP strained quantum well structures and their applications to visible laser diodes
3. Electrically injected visible (639–661 nm) vertical cavity surface emitting lasers
4. Electrically injected visible (639–661 nm) vertical cavity surface emitting lasers
5. AlGaInP visible resonant cavity light-emitting diodes
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electroreflection from higher subband transitions in a ZnSe–Zn0.8Cd0.2Se superlattice;Solid State Communications;1999-07
2. Electroabsorption in ordered and disordered GaInP;Journal of Applied Physics;1997-01-15
3. Electric field dependent intersubband optical transitions in a ZnCdSe–ZnSe superlattice;Applied Physics Letters;1996-09-30
4. Bias and temperature-dependent photocurrent spectroscopy of a compressively strained GaInP/AlGaInP single quantum well;Semiconductor Science and Technology;1995-04-01
5. InGaP/AlInGaP quantum well waveguide modulators for visible wavelengths;Integrated Photonics Research;1995
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