Study of the optical properties of (100) and (111) oriented GaInAs/GaAs strained-layer superlattices
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
2. Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy
3. Strain-generated electric fields in [111] growth axis strained-layer superlattices
4. Electronic structure of [001]- and [111]-growth-axis semiconductor superlattices
5. Optical properties of strained-layer superlattices with growth axis along [111]
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1. Radiative recombination of carriers in the GaxIn1−xP/GaAs double-junction tandem solar cells;Solar Energy Materials and Solar Cells;2013-04
2. Polarization fields and band offsets in GaInP/GaAs and ordered/disordered GaInP superlattices;Applied Physics Letters;1996-05-13
3. Converse piezoelectric effect in [111] strained-layer heterostructures;Physical Review B;1995-04-15
4. CdS/CdSe intrinsic Stark superlattices;Journal of Applied Physics;1992-01-15
5. Optical characterizations of (111) oriented InGaAs/InAlAs strained quantum wells grown on InP substrates;Journal of Applied Physics;1991-11
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