MBE growth of multiple quantum wells with room-temperature exciton peaks at 1.3 μm
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference8 articles.
1. Intersubband absorption in highly strained InGaAs/InAlAs multiquantum wells
2. Doping effects on intersubband absorption in InGaAs/InAlAs multiquantum wells
3. High-temperature heavy-hole and light-hole excitons and well-width dependence of excitons in InGaAs/InAIAs multiple-quantum-well structures
4. Room-temperature 1.55μm optical bistability in a GaInAs/AlInAs multiple-quantum-well etalon
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electroabsorption in lattice-matched InGaAlAs-InAlAs quantum wells at 1.3 μm;IEEE Photonics Technology Letters;1995-10
2. All‐optical, high contrast GaAlInAs multiple quantum well asymmetric reflection modulator at 1.3 μm;Applied Physics Letters;1993-03-29
3. Room‐temperature optical nonlinearities of GaInAs/AlInAs and GaAlInAs/AlInAs multiple quantum wells and integrated‐mirror etalons at 1.3 μm;Journal of Applied Physics;1991-11-15
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