All‐optical, high contrast GaAlInAs multiple quantum well asymmetric reflection modulator at 1.3 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108637
Reference15 articles.
1. Low-voltage multiple quantum well reflection modulator with on:off ratio > 100:1
2. K-band operation of asymmetric Fabry-Perot modulators
3. All-optical photonic switches using integrated inverted asymmetric Fabry-Perot modulators and heterojunction phototransistors
4. High-contrast/low-voltage normally on InGaAs/AlGaAs asymmetric Fabry-Perot modulator
5. Novel reflectance modulator employing an InGaAs/AlGaAs strained‐layer superlattice Fabry–Perot cavity with unstrained InGaAs/InAlAs mirrors
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1. Contrast ratio enhancement in a saturable absorber-based photonic analog-to-digital converter;Photonic and Quantum Technologies for Aerospace Applications IV;2002-07-31
2. Photoreflectance and photoluminescence spectroscopy of the lattice-matched InGaAs/InAlAs single quantum well;Journal of Applied Physics;2002-07-15
3. Resonant optical nonlinearities in semiconductors;IEEE Journal of Selected Topics in Quantum Electronics;2000-11
4. A femtosecond, polarization-sensitive optically addressed modulator based on virtual exciton effects in an anisotropically strained multiple quantum well;Applied Physics Letters;2000-03-06
5. Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications;Journal of Applied Physics;1999-05
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