Electronic properties of Si δ-doped GaAs quantum wells-Reference-Cited by-同舟云学术

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Electronic properties of Si δ-doped GaAs quantum wells

Published:1992-01 Issue:2 Volume:12 Page:257-260
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Mendonça C.A.C.,Scolfaro L.M.R.,Oliveira J.B.B.,Plentz F.,Micovic M.,Leite J.R.,Meneses E.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Optical properties of δ-doped doping superlattices

2. Photoluminescence from the quasi-two-dimensional electron gas at a single silicon δ-doped layer in GaAs

3. Radiative transitions associated with hole confinement at Si δ-doped planes in GaAs

4. Modulation of carrier distributions in delta‐doped quantum wells

5. Hole confinement effects on multiple Si δ doping in GaAs

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. p-typeδ-doping quantum wells and superlattices in Si: Self-consistent hole potentials and band structures;Physical Review B;1998-12-15

2. MAGNETOTRANSPORT STUDY IN SEMICONDUCTOR QUANTUM WELL SYSTEMS;Journal of Physics and Chemistry of Solids;1998-09

3. Electron Subband Levels of n-Type δ-Doped Quantum Wells under In-Plane Magnetic Fields;International Journal of Modern Physics B;1997-04-10

4. Band structure of holes inp-type δ-doping quantum wells and superlattices;Physical Review B;1996-04-15

5. Behavior of carriers in ?-doped quantum wells under in-plane magnetic fields;International Journal of Quantum Chemistry;1996

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