Near band-edge luminescence studies of the effect of interfacial step distribution and alloy disorder in ultrathin single quantum wells grown by MBE under RHEED determined conditions-Reference-Cited by-同舟云学术

Near band-edge luminescence studies of the effect of interfacial step distribution and alloy disorder in ultrathin single quantum wells grown by MBE under RHEED determined conditions

Published:1987-01 Issue:3 Volume:3 Page:313-323
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Voillot F.,Kim J.Y.,Tang W.C.,Madhukar A.,Chen P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Monte-Carlo simulations of MBE growth of III–V semiconductors: The growth kinetics, mechanism, and consequences for the dynamics of RHEED intensity

2. Role of Surface Molecular Reactions in Influencing the Growth Mechanism and the Nature of Nonequilibrium Surfaces: A Monte Carlo Study of Molecular-Beam Epitaxy

3. Implications of the configuration‐dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III‐V molecular beam epitaxial growth and the dynamics of the reflection high‐energy electron diffraction intensity

4. S.V. Ghaisas and A. Madhukar, The Nature of Molecular Beam Epitaxial Growth Mechanisms and Dynamics of Surface Morphology: Computer Simulations of III–V Semiconductor Growth, Journal of Crystal Growth (Submitted)

5. M. Thomsen and A. Madhukar, Computer simulations of the Role of Group V Molecular Reactions at Steps During the Molecular Beam Epitaxial Growth of III–V Semiconductors, Journal of Crystal Growth (Submitted).

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1. Reflection High-Energy Electron Diffraction as an Intrinsic Material Property Sensor for Machine Condition Transfer Function in Molecular Beam Epitaxial Growth of III-V Compound Semiconductors;MRS Proceedings;1997

2. Material-Related Growth Characteristics in MBE;Molecular Beam Epitaxy;1996

3. Surface processes responsible for reflectance-anisotropy oscillations during molecular beam epitaxy growth of GaAs(001);Surface Science;1995-08

4. Contribution of reflection high-energy electron diffraction to nanometre tailoring of surfaces and interfaces by molecular beam epitaxy;Semiconductor Science and Technology;1994-02-01

5. GaSb/InAs heterojunctions grown by MOVPE: Effect of gas switching sequences on interface quality;Journal of Crystal Growth;1991-04