Interface formation and electronic structure of PECVD SiO2 InSb structures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Characterization of improved InSb interfaces
2. XPS study of interface formation of CVD SiO2 on InSb
3. Hysteresis free SiO2/InSb metal‐insulator‐semiconductor diodes
4. Correlation between the composition profile and electrical conductivity of the thermal and anodic oxides of InSb
5. Oxide and interface properties of plasma-grown and wet anodic oxides of InSb metal/oxide/semiconductor devices
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization and preparation of SiO2and SiOF films using an RF PECVD technique from TEOS/O2and TEOS/O2/CF4precursors;Journal of Physics D: Applied Physics;2004-08-20
2. Investigation of low temperature SiO2 plasma enhanced chemical vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-03-01
3. Investigation of SiO2 plasma enhanced chemical vapor deposition through tetraethoxysilane using attenuated total reflection Fourier transform infrared spectroscopy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-09
4. Low‐temperature plasma enhanced chemical vapor deposition of SiO2;Applied Physics Letters;1994-12-19
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